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BAT74V,115 Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza
componentes Descripción
fabricante
BAT74V,115
NXP
NXP Semiconductors. 
BAT74V,115 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
NXP Semiconductors
Schottky barrier double diode
Product data sheet
BAT74V
FEATURES
PINNING
Low forward voltage
Low capacitance
Ultra small SMD plastic package
Flat leads: excellent coplanarity and improved thermal
behaviour.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Line termination
Inverse polarity protection.
PIN
DESCRIPTION
1
anode 1
2
not connected
3
cathode 2
4
anode 2
5
not connected
6
cathode 1
handbook, halfpage 6
5
4
6
4
DESCRIPTION
Planar Schottky barrier double diode with an integrated
guard ring for stress protection.
Two separate dies encapsulated in a SOT666 ultra small
SMD plastic package.
1
2
3
1
3
Top view
MAM461
Marking code: 74.
Fig.1 Simplified outline (SOT666) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VR
IF
IFRM
IFSM
Ptot
Tstg
Tj
Tamb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
tp 1 s; δ ≤ 0.5
tp < 10 ms
Tamb 25 °C
MIN.
65
65
MAX.
30
200
300
600
230
+150
125
+125
UNIT
V
mA
mA
mA
mW
°C
°C
°C
2002 Sep 02
2

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