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2PB709ART Datasheet PDF : 10 Pages
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NXP Semiconductors
2PB709ART
45 V, 100 mA PNP general-purpose transistor
500
hFE
(1)
400
006aab028
300
(2)
200
(3)
100
0
−10−1
−1
−10
−102
IC (mA)
VCE = −10 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
−1.3
VBEsat
(V)
−0.9
(1)
(2)
006aab030
−0.1
IC
(A)
−0.08
−0.06
−0.04
−0.02
IB (mA) = −0.75
−0.7
−0.65 −0.6
−0.55 −0.5
−0.45
−0.4
−0.35
−0.3
−0.25 −0.2
−0.15
−0.1
−0.05
006aab029
0
0
−2
−4
−6
−8
−10
VCE (V)
Tamb = 25 °C
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
−1
006aab031
VCEsat
(V)
−10−1
−0.5
(3)
(1)
(2)
(3)
−0.1
−10−1
−1
−10
−102
IC (mA)
−10−2
−10−1
−1
−10
−102
IC (mA)
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 5. Base-emitter saturation voltage as a function of
collector current; typical values
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
2PB709ART_1
Product data sheet
Rev. 01 — 19 March 2007
© NXP B.V. 2007. All rights reserved.
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