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2PB709ART Datasheet PDF : 10 Pages
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NXP Semiconductors
2PB709ART
45 V, 100 mA PNP general-purpose transistor
103
Zth(j-a)
(K/W)
102
δ=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
10 0.01
0
006aaa991
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23 (TO-236AB); typical values
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
ICBO
collector-base cut-off VCB = −45 V; IE = 0 A
-
-
−10
nA
current
VCB = −45 V; IE = 0 A;
-
-
−5
µA
Tj = 150 °C
IEBO
emitter-base cut-off VEB = −5 V; IC = 0 A
-
-
−10
nA
current
hFE
VCEsat
fT
DC current gain
collector-emitter
saturation voltage
transition frequency
VCE = −10 V;
IC = −2 mA
IC = −100 mA;
IB = −10 mA
VCE = −10 V;
IC = −1 mA;
f = 100 MHz
210
-
[1] -
-
70
-
340
−500 mV
-
MHz
Cc
collector capacitance VCB = −10 V;
IE = ie = 0 A;
f = 1 MHz
-
-
5
pF
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2PB709ART_1
Product data sheet
Rev. 01 — 19 March 2007
© NXP B.V. 2007. All rights reserved.
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