74LVC1G11(2007) Ver la hoja de datos (PDF) - NXP Semiconductors.

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fabricante

74LVC1G11
(Rev.:2007)

Single 3-input AND gate

NXP Semiconductors. 

NXP Semiconductors

74LVC1G11

Single 3-input AND gate

11. Dynamic characteristics

Table 8. Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for load circuit see Figure 8.

Symbol Parameter

Conditions

−40 °C to +85 °C

Min Typ[1] Max

tpd

propagation delay A, B and C to Y; see Figure 7 [2]

VCC = 1.65 V to 1.95 V

1.5

4.7 17.2

VCC = 2.3 V to 2.7 V

1.0

3.0

6.2

VCC = 2.7 V

1.0

3.0

6.0

VCC = 3.0 V to 3.6 V

1.0

2.6

4.9

VCC = 4.5 V to 5.5 V

1.0

1.9

3.5

CPD

power dissipation VI = GND to VCC; VCC = 3.3 V [3]

-

13

-

capacitance

−40 °C to +125 °C Unit

Min

Max

1.5

21.5 ns

1.0

7.8 ns

1.0

7.5 ns

1.0

6.2 ns

1.0

4.4 ns

-

- pF

[1] Typical values are measured at Tamb = 25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.

[2] tpd is the same as tPLH and tPHL.

[3] CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(CL × VCC2 × fo) = sum of the outputs.

12. Waveforms

VI

A, B, C

input

GND

VOH

Y output

VOL

VM

tPHL

VM

tPLH

001aac031

Measurement points are given in Table 9.

VOL and VOH are typical output voltage levels that occur with the output load.

Fig 7. The input (A, B, C) to output (Y) propagation delays

74LVC1G11_4

Product data sheet

Rev. 04 — 1 August 2007

© NXP B.V. 2007. All rights reserved.

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