WILLAS
3.0A LOW VF SCHOTTKY BARRIER RECTIFIERS-20V-40V
1.0A SURFACE MOUNT SCHOTTKY BARRIESRMRAE-CLTIFPIEARCSK-A20GVE- 200V
SOD-123+ PACKAGE
FM120-M+
SL32-ATHL RU
SL3F4M-A12L00-M+
Pb Free Product
P a cFkei nagt ui nr ef os r m a t i o n
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
P0
• Low power loss, high efficiency.
P1
• High current capability, low forward voltage drop.
d
• High surge capability.
• Guardring for overvoltage protection.
E
• Ultra high-speed switching.
F• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
B
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : ULA94-V0 rated flame retardant P
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
W
0.031(0.8) Typ.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
D2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
D1
RatingTs at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
C
For capacitive load, derate current by 20%
RATINGS
W1
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MDH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Marking Code
Maximum Recurrent Peak Reverse Voltage
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200 Volt
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRMS
14
21
28
35
42
56
70
105
140 Volt
VDC
20
30
40
50
unit:mm
60
80
100
150
200 Volt
Maximum Average Forward Rectified Current
IO
1.0
Amp
Item
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
Typical Thermal Resistance (Note 2C)arrier width
RΘJA
Typical Junction Capacitance (NoteC1a)rrier length
CJ
Operating Temperature Range Carrier depth
TJ
Storage Temperature Range
Sprocket hole
TSTG
13" Reel outside diameter
Symbol Tolerance
A
0.1
B
0.1
C -55 to +1250.1
d
0.1
D
2.0
SMA-L
30
2.9400
5.51020
2.10
- 16.550to +175
330.00
-55 to +150
Amp
℃/W
PF
℃
℃
13" Reel inner diameter
D1
min
50.00
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
7" Reel outside diameter
D
2.0
178.00
Maximum
Forward
Voltage
at
1.0A DC
7" Reel
inner
diameterVF
D1
0.5m0 in
0.70 62.00
0.85
0.9
0.92 Volt
Maximum Average Reverse CurrenFteaet d @hoTleA=d2ia5m℃eter IR
D2
0.5
13.000.5
mAm
Rated DC Blocking Voltage
Sproc@keTtAh=o1le25p℃osition
E
0.1
1.7150
Punch hole position
NOTES:
Punch hole pitch
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Sprocket hole pitch
2- Thermal Resistance From JunctionEtomAbmobsisemntent center
F
0.1
P
0.1
P0
0.1
P1
0.1
5.50
4.00
4.00
2.00
Overall tape thickness
T
0.1
0.23
Tape width
W
0.3
12.00
Reel width
W1
1.0
18.00
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
2012-06
201-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.