MBR60100CT(2008) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
fabricante
MBR60100CT Datasheet PDF : 4 Pages
| |||
MBR60100CT
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode (1)
IF = 30 A
IF = 60 A
TJ = 25 °C
VF
IF = 30 A
IF = 60 A
TJ = 125 °C
0.78
0.92
0.64
0.78
Reverse current per diode (2)
VR = 100 V
TJ = 25 °C
TJ = 125 °C
IR
8.0
8.5
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
MAX.
0.82
1.0
0.69
0.83
100
20
UNIT
V
µA
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR60100CT
Typical thermal resistance per diode
RθJC
0.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
MBR60100CT-E3/45
2.068
PACKAGE CODE
45
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
70
60
50
40
30
20
10
0
0
25
50
100
125
150
175
Case Temperature (°C)
Figure 1. Forward Derating Curve
400
300
200
100
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88892
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 19-May-08
Share Link: 