2N1132 Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc
Número de pieza
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fabricante
2N1132 Datasheet PDF : 3 Pages
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SILICON PLANAR
PNP TRANSISTOR
2N1132
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO(1)
V(BR)CBO
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
IC = -10mA
IC = -10µA
VCB = -50V
IB = 0
IE = 0
IE = 0
ICBO
Collector Cut-Off Current
VCB = -30V
IE = 0
TA = 150°C
IEBO
Emitter Cut-Off Current
VEB = -5V
IC = 0
ICER
VCE(sat)(1)
VBE(sat)(1)
hFE(1)
Collector Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Forward-current transfer
ratio
VCE = -50V
IC = -150mA
IC = -150mA
IC = -5mA
IC = -150mA
RBE <= 10Ω
IB = -15mA
IB = -15mA
VCE = -10V
VCE = -10V
DYNAMIC CHARACTERISTICS
| hfe |
Small signal forward-current
transfer ratio
Cobo
Output Capacitance
Cibo
td
tr
ts
tf
Input Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
IC = -50mA
f = 20MHz
VCB = -10V
f = 1.0MHz
VEB = -0.5V
f = 1.0MHz
VCE = -10V
IE = 0
IC = 0
IC = -150mA VCC = -30V
IB1 = - IB2 = -15mA
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Min. Typ Max. Units
-40
V
-50
-10
-1.0
µA
-100
-100
-10
mA
-1.3
V
-1.5
25
30
100
3.0
20
45
pF
80
15
25
ns
80
25
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8069
Issue 1
Page 2 of 3
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