256Mb: x4, x8, x16 SDRAM
PRECHARGE Operation
Figure 45: Single READ Without Auto Precharge
T0
CLK
T1
tCK
tCKS tCKH
CKE
tCMS tCMH
Command
ACTIVE
NOP
DQM
tAS tAH
Address
Row
A10
BA0, BA1
tAS tAH
Row
tAS tAH
Bank
DQ
tRCD
tRAS
tRC
T2
T3
tCL
tCH
READ
NOP
tCMS tCMH
Column m
Disable auto precharge
Bank
tAC
tLZ
CL = 2
T4
T5
NOP
PRECHARGE
All banks
tOH
DOUT
tHZ
Single bank
Bank(s)
T6
NOP
tRP
T7
ACTIVE
Row
Row
Bank
T8
NOP
Don’t Care
Undefined
Note: 1. For this example, BL = 1, CL = 2, and the READ burst is followed by a manual PRE-
CHARGE.
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. S 12/12 EN
73
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 1999 Micron Technology, Inc. All rights reserved.