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MCRF450

13.56 MHz Read/Write Passive RFID Device

Microchip Technology 

MCRF450/451/452/455

2.0 ELECTRICAL CHARACTERISTICS

TABLE 2-1: ABSOLUTE RATINGS

Parameters

Symbol

Min

Max

Units

Conditions

Coil current into coil pad

IPP_AC

—

40

mA Peak-to-Peak coil current

Maximum power dissipation

PMPD

—

0.5

W—

Ambient temperature with power applied TAMB

-40

+125

°C —

Assembly temperature

TASM

—

300

°C < 10 sec.

Storage temperature

TSTORE

-65

150

°C —

Note:

Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This

is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating

conditions for extended periods may affect device reliability.

TABLE 2-2:

OPERATING DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating Temperature = -20°C to +70°C

Parameters

Symbol Min

Typ

Max Units

Conditions

Reading voltage

VDDR

2.8

—

—

V VDD voltage for reading at 25°C

Operating current in

IOPER_N

—

20

—

Normal mode

µA VDD = 2.8V during reading at 25°C

Operating current in

IOPER_F

—

45

—

Fast mode

µA VDD = 2.8V during reading at 25°C

Writing current

IWRITE

—

130

—

µA At 25°C, VDD = 2.8V

Writing voltage

VWRITE

2.8

—

—

VDC At 25 °C

Modulation resistance

RM

—

3.0

5.0

Ω DC turn-on resistance between

Drain and Source terminals of the

modulation transistor at VDD = 2.8V

Data retention

—

200

—

—

Years For T < 120°C

Endurance

—

1.0

—

—

Million At 25°C

Cycles

 2003 Microchip Technology Inc.

DS40232H-page 5

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