Overvoltage Protectors with
External pFET
Table 1. MOSFETS Suggestions
PART
CONFIGURATON/
PACKAGE
Si3993DV
Si1433DH
Si3983DV
Si1413DH
Si5933DC
Si6991DQ
Dual/TSOP-6
Single/SOT-363
Dual/TSOP-6
Single/SOT-363
Dual/1206-8
Dual/TSSOP-8
VDS MAX
(V)
-30
-30
-20
-20
-20
-30
RON MAX (mΩ)
at VGS = -4.5V
245 each
260
110 each
115
110 each
68 each
MANUFACTURER
Vishay Siliconix
www.vishay.com
RC
1MΩ
CHARGE-CURRENT
LIMIT RESISTOR
HIGH-
VOLTAGE
DC
SOURCE
Cs
100pF
RD
1.5kΩ
DISCHARGE
RESISTANCE
STORAGE
CAPACITOR
DEVICE
UNDER
TEST
Figure 4. Human Body ESD Test Model
IN Bypass Consideration
For most applications, bypass IN to GND with a 1µF
ceramic capacitor. If the power source has significant
inductance due to long lead length, take care to pre-
vent overshoots due to the LC tank circuit and provide
protection if necessary to prevent exceeding the 30V
absolute maximum rating on IN.
ESD Test Conditions
The MAX4923–MAX4926 are ESD protected to ±15kV
(typ) Human Body Model on IN when IN is bypassed to
ground with a 1µF ceramic capacitor as close as possi-
ble to IN.
IP 100%
90%
Ir
PEAK-TO-PEAK RINGING
(NOT DRAWN TO SCALE)
AMPERES
36.8%
10%
0
0 tRL
TIME
tDL
CURRENT WAVEFORM
Figure 5. Human Body Model Current Waveform
Human Body Model
Figure 4 shows the Human Body Model and Figure 5
shows the current waveform it generates when dis-
charged into a low impedance. This model consists of
a 100pF capacitor charged to the ESD voltage of inter-
est that is then discharged into the device through a
1.5kΩ resistor.
PROCESS: BiCMOS
Chip Information
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