IXFN20N120 Ver la hoja de datos (PDF) - IXYS CORPORATION
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IXFN20N120 Datasheet PDF : 4 Pages
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Advanced Technical Information
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C, Chip capability
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
ITSJ≤≤
1ID5M0, °dCi/,dtR≤G
100
=2
A/µs,
Ω
VDD
≤
VDSS,
TC= 25°C
50/60 Hz, RMS t = 1 min
IISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
IXFN 20N120
D
V = 1200 V
DSS
ID25 =
= RDS(on)
trr
≤
20 A
0.75 Ω
300 ns
G
S
S
Maximum Ratings
1200
V
1200
V
±30
V
±40
V
20
A
80
A
10
A
40
mJ
2
J
5 V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
780
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Features
• International standard package
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• FastintrinsicRectifier
Symbol
VDSS
VGH(th)
IGSS
IDSS
RDS(on)
Test Conditions
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 8 mA
VGS = ±30 VDC, VDS = 0
VVGDSS
=
=
0VVDSS
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1200
2.5
V
4.5 V
TTJJ
=
=
25°C
125°C
±100 nA
100 µA
2 mA
0.75 Ω
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
© 2003 IXYS All rights reserved
DS99116(11/03)
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