SM5021 series
Electrical Characteristics
3V operation: AA, AB, AC, AD, AE, KD, KE series
VDD = 2.7 to 3.6V, VSS = 0V, Ta = − 20 to + 80°C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min typ max
SM5021×AH, CF5021×A
Q: Measurement cct 1, VDD = 2.7V, SM5021×BH, CF5021×B
HIGH-level output voltage
VOH
IOH = 4mA
SM5021×CH, CF5021×C
SM5021×DH, CF5021×D 2.1
2.4
–
V
Q: Measurement cct 1, VDD = 2.7V,
IOH = 8mA
SM5021×EH, CF5021×E
SM5021×AH, CF5021×A
Q: Measurement cct 2, VDD = 2.7V, SM5021×BH, CF5021×B
LOW-level output voltage
VOL
IOL = 4mA
SM5021×CH, CF5021×C
SM5021×DH, CF5021×D
–
0.3
0.4
V
Q: Measurement cct 2, VDD = 2.7V,
IOL = 8mA
SM5021×EH, CF5021×E
HIGH-level input voltage
VIH INHN
2.0
–
–
V
LOW-level input voltage
VIL INHN
–
–
0.5
V
Output leakage current
IZ
Q: Measurement cct 2, VDD = 3.3V, INHN = LOW, VOH = VDD
Q: Measurement cct 2, VDD = 3.3V, INHN = LOW, VOL = VSS
–
–
10
µA
–
–
10
Current consumption
70MHz crystal oscillator,
IDD measurement cct 3, load cct 1,
INHN = open, CL = 15pF
SM5021A×H, CF5021A×
SM5021K×H, CF5021K×
–
13
25
mA
INHN pull-up resistance
RUP Measurement cct 4
25
100 250
kΩ
SM5021×AH, CF5021×A 5.1
6.0
6.9
Feedback resistance
(A× series only)
Rf Measurement cct 5
SM5021×BH, CF5021×B 2.8
3.3
3.8
SM5021×CH, CF5021×C 3.3
3.9
4.5
kΩ
SM5021×DH, CF5021×D
SM5021×EH, CF5021×E
2.3
2.7
3.1
Built-in capacitance
CG Design value. A monitor pattern on a wafer is tested.
7.44
8
8.56
pF
SM5021×AH, CF5021×A
CD
SM5021×BH, CF5021×B
Design value. A monitor pattern on a SM5021×CH, CF5021×C
wafer is tested.
SM5021×DH, CF5021×D
13.95
15
16.05
pF
SM5021×EH, CF5021×E 11.16 12 12.84
SEIKO NPC CORPORATION —5