BD9102FVM Ver la hoja de datos (PDF) - ROHM Semiconductor
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BD9102FVM
ROHM Semiconductor
BD9102FVM Datasheet PDF : 29 Pages
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BD9102FVM BD9104FVM BD9106FVM
Datasheet
◎BD9104FVM(Ta=25℃,VCC=5V,EN=VCC unless otherwise specified.)
Parameter
Symbol
Min.
Typ.
Standby current
ISTB
-
0
Bias current
ICC
-
250
EN Low voltage
VENL
-
GND
EN High voltage
VENH
2.0
VCC
EN input current
IEN
-
1
Oscillation frequency
Pch FET ON resistance *5
Nch FET ON resistance *5
FOSC
RONP
RONN
0.8
1
-
0.35
-
0.25
Output voltage
VOUT
3.234
3.300
ITH SInk current
ITHSI
10
20
ITH Source Current
ITHSO
10
20
UVLO threshold voltage
VUVLOTh
3.9
4.1
UVLO hysteresis voltage
VUVLOHys
50
100
Soft start time
TSS
0.5
1
Timer latch time
TLATCH
0.5
1
*5 Design Guarantee（Outgoing inspection is not done on all products）
Max.
10
400
0.8
-
10
1.2
0.60
0.50
3.366
-
-
4.3
200
2
2
Unit
μA
μA
V
V
μA
MHz
Ω
Ω
V
μA
μA
V
mV
ms
ms
Conditions
EN=GND
Standby mode
Active mode
VEN=5V
PVCC=5V
PVCC=5V
VOUT=H
VOUT=L
VCC=H→L
◎BD9106FVM(Ta=25℃,VCC=5V,EN=VCC,R1=20kΩ,R2=10kΩunless otherwise specified.)
Parameter
Symbol
Min.
Typ.
Max.
Standby current
ISTB
-
0
10
Bias current
ICC
-
250
400
EN Low voltage
VENL
-
GND
0.8
EN High voltage
VENH
2.0
VCC
-
EN input current
IEN
-
1
10
Oscillation frequency
Pch FET ON resistance *5
Nch FET ON resistance *5
FOSC
RONP
RONN
0.8
1
1.2
-
0.35
0.60
-
0.25
0.50
ADJ reference voltage
VADJ
0.780
0.800
0.820
Output voltage
VOUT
-
1.200
-
ITH SInk current
ITHSI
10
20
-
ITH Source Current
ITHSO
10
20
-
UVLO threshold voltage
VUVLOTh
3.2
3.4
3.6
UVLO hysteresis voltage
VUVLOHys
50
100
200
Soft start time
TSS
1.5
3
6
Timer latch time
TLATCH
0.5
1
2
*5 Design Guarantee（Outgoing inspection is not done on all products）
Unit
μA
μA
V
V
μA
MHz
Ω
Ω
V
V
ΜA
ΜA
V
MV
Ms
Ms
Conditions
EN=GND
Standby mode
Active mode
VEN=5V
PVCC=5V
PVCC=5V
ADJ=H
ADJ=L
VCC=H→L
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TSZ02201-0J3J0AJ00080-1-2
02.MAR.2012 Rev.001
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