BBY51E6433 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

fabricante

BBY51E6433

Silicon Tuning Diode

Infineon Technologies 

BBY51...

Electrical Characteristics at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Reverse current

VR = 6 V

VR = 6 V, TA = 85 °C

IR

nA

-

-

10

-

- 200

AC Characteristics

Diode capacitance

VR = 1 V, f = 1 MHz

VR = 2 V, f = 1 MHz

VR = 3 V, f = 1 MHz

VR = 4 V, f = 1 MHz

CT

pF

5.05 5.4 5.75

3.4 4.2 5.2

2.7 3.5 4.6

2.5 3.1 3.7

Capacitance ratio

VR = 1 V, VR = 4 V, f = 1 MHz

Capacitance difference

VR = 1 V, VR = 3 V, f = 1 MHZ

Capacitance difference

VR = 3 V, VR = 4 V, f = 1 MHZ

Series resistance

VR = 1 V, f = 1 GHz

CT1/CT4 1.55 1.75 2.2

C1V-C3V 1.4 1.78 2.2 pF

C3V-C4V 0.3 0.5 0.7

rS

- 0.37 - Ω

2

2014-02-11

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