AM28F010-150PC Ver la hoja de datos (PDF) - Advanced Micro Devices

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AM28F010-150PC

1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

Advanced Micro Devices 

Table 5. Flashrite Programming Algorithm

Bus Operations

Command

Comments

Standby

Wait for VPP Ramp to VPPH (Note 1)

Initialize Pulse counter

Write

Program Setup

Program

Data = 40h

Valid Address/Data

Standby

Write

Program-Verify (Note 2)

Duration of Programming Operation (tWHWH1)

Data = C0h Stops Program Operation

Standby

Write Recovery Time before Read = 6 µs

Read

Read Byte to Verify Programming

Standby

Compare Data Output to Data Expected

Write

Reset

Data = FFh, resets the register for read operations.

Standby

Wait for VPP Ramp to VPPL (Note 1)

Notes:

1. See AC and DC Characteristics for values of VPP parameters. The VPP power supply can be hard-wired to the device or

switchable. When VPP is switched, VPPL may be ground, no connect with a resistor tied to ground, or less than VCC + 2.0 V.

2. Program Verify is performed only after byte programming. A final read/compare may be performed (optional) after the register

is written with the read command.

Am28F010

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