FCPF7N60(2005) Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
fabricante
FCPF7N60 Datasheet PDF : 10 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
Notes :
1. 250µs Pulse Test
2.
T
C
=
25°C
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
VGS = 10V
VGS = 20V
Note : TJ = 25°C
5
10
15
20
ID, Drain Current [A]
101
100
10-1
2
150°C
25°C
-55°C
Note
1. VDS = 40V
2. 250µs Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
101
100
10-1
0.2
150°C
25°C
Notes :
1. VGS = 0V
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
3000
2000
1000
0
10-1
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
Coss
Ciss
Crss
Notes :
1. V = 0 V
GS
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
12
V = 100V
DS
10
VDS = 250V
VDS = 400V
8
6
4
2
Note : I = 7A
D
0
0
5
10
15
20
25
QG, Total Gate Charge [nC]
3
FCP7N60 / FCPF7N60 Rev. A1
www.fairchildsemi.com
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