HA-2842/883
Die Characteristics
DIE DIMENSIONS:
77 x 81 x 19 mils ± 1 mils
1960 x 2060 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride over Silox
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
1.83 x 105 A/cm2 at 56mA
SUBSTRATE POTENTIAL (Powered Up): V-
TRANSISTOR COUNT: 58
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
BAL
HA-2842/883
BAL
-IN
V+
+IN
V-
OUT
3-234
Spec Number 511088-883