BC635-16 Ver la hoja de datos (PDF) - ON Semiconductor
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BC635-16 Datasheet PDF : 4 Pages
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BC637, BC639, BC639−16
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
BC637
60
−
BC639
80
−
Vdc
−
−
Collector − Emitter Zero−Gate Breakdown Voltage(Note 1)
V(BR)CES
(IC = 100 mAdc, IB = 0)
BC639−16
120
−
Collector − Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
BC637
60
−
BC639
80
−
Vdc
−
Vdc
−
−
Emitter − Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = 125°C)
ON CHARACTERISTICS (Note 1)
V(BR)EBO
5.0
−
−
Vdc
ICBO
−
−
100
nAdc
−
−
10
mAdc
DC Current Gain
(IC = 5.0 mAdc, VCE = 2.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc)
(IC = 500 mA, VCE = 2.0 V)
Collector − Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
Base − Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE
BC637
BC639
BC639−16ZLT1
−
25
−
−
40
−
160
40
−
160
100
−
250
25
−
−
VCE(sat)
−
Vdc
−
0.5
VBE(on)
−
Vdc
−
1.0
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
fT
MHz
−
200
−
Cob
pF
−
7.0
−
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%.
Cib
pF
−
50
−
ORDERING INFORMATION
Device
BC637G
Package
TO−92
(Pb−Free)
Shipping†
5000 Units / Bulk
BC637RL1G
TO−92
(Pb−Free)
2000 / Tape & Reel
BC639G
TO−92
(Pb−Free)
5000 Units / Bulk
BC639RL1G
TO−92
(Pb−Free)
2000 / Tape & Reel
BC639ZL1G
TO−92
(Pb−Free)
2000 / Ammo Box
BC639−16ZL1G
TO−92
(Pb−Free)
2000 / Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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