KTD1624 Ver la hoja de datos (PDF) - KEC
Número de pieza
componentes Descripción
fabricante
KTD1624 Datasheet PDF : 3 Pages
| |||
SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
ᴌAdoption of MBIT processes.
ᴌLow collector-to-emitter saturation voltage.
ᴌFast switching speed.
ᴌLarge current capacity and wide ASO.
ᴌComplementary to KTB1124.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Vollector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current(Pulse)
Collector Power Dissipation
Junction Temperature
VCBO
60
VCEO
50
VEBO
6
IC
3
ICP
6
PC
500
PC*
1
Tj
150
Storage Temperature Range
Tstg
-55ᴕ150
* : Package mounted on ceramic substrate(250mm2ᴧ0.8t)
UNIT
V
V
V
A
A
mW
W
ᴱ
ᴱ
KTD1624
EPITAXIAL PLANAR NPN TRANSISTOR
A
C
H
G
D
D
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
hFE Rank
Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
hFE(1) (Note)
hFE (2)
VCE(sat)
VBE(sat)
fT
Cob
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=100Ὠ
VCE=2V, IC=3A
IC=2A, IB=100Ὠ
IC=2A, IB=100Ὠ
VCE=10V, IC=50Ὠ
VCB=10V, f=1ὲ, IE=0
Turn-on Time
ton
Switching
Time
Storage Time
tstg
PDWC =<=210%µs I B1
INPUT
VR
50
R8
I B2
100µ
Fall Time
tf
-5V
10IB1=-10IB2 =I C=1A
Note : hFE (1) Classification A:100ᴕ200, B:140ᴕ280, C:200ᴕ400
25
470µ
25V
2001. 12. 6
Revision No : 4
MIN.
-
-
100
35
-
-
-
-
TYP.
-
-
-
-
0.19
0.94
150
25
MAX.
1
1
400
-
0.5
1.2
-
-
UNIT.
ὧ
ὧ
V
V
ὲ
ὸ
-
70
-
-
650
-
nS
-
35
-
1/3
Share Link: 