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NTE2412

Silicon NPN Transistor General Purpose, High Voltage Amp, (Compl to NTE2413)

NTE Electronics 

NTE2412

Silicon NPN Transistor

General Purpose, High Voltage Amp,

(Compl to NTE2413)

Description:

The NTE2412 is a silicon NPN transistor in an SOT–23 type surface mount package designed for use

primarily in telephone and professional communication equipment.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA

Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

Collector–Emitter Saturation Voltage

DC Current Gain

Transition Frequency

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

VCE(sat)

hFE

fT

IC = 50µA

IC = 100µA

IE = 50µA

VCB = 200V

VEB = 4V

IC = 50mA, IB = 5mA

VCE = 10V, IC = 10mA

VCE = 30V, IE = 10mA,

f = 100MHz

Capacitance

Cob VCB = 30V, IE = 0, f = 1MHz

Min Typ Max Unit

300 – – V

300 – – V

5––V

– – 0.5 µA

– – 0.5 µA

– – 2.0 V

56 – 120

50 100 – MHz

– 3 – pF

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