BUT18F Ver la hoja de datos (PDF) - Philips Electronics
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BUT18F Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUT18F; BUT18AF
SYMBOL
PARAMETER
CONDITIONS
hFE
DC current gain
VCE = 5 V; IC = 10 mA;
see Fig.9
VCE = 5 V; IC = 1 A; see Fig.9
Switching times resistive load (see Figs 10 and 11)
ton
turn-on time
ts
storage time
tf
fall time
ICon = 4 A;
IBon = −IBoff = 800 mA
ICon = 4 A;
IBon = −IBoff = 800 mA
ICon = 4 A;
IBon = −IBoff = 800 mA
Switching times inductive load (see Figs 10 and 13)
ts
storage time
tf
fall time
ICon = 4 A; IBon = 800 mA
ICon = 4 A; IBon = 800 mA
Note
1. Measured with a half-sinewave voltage (curve tracer).
MIN. TYP. MAX. UNIT
10
18
35
10
20
35
−
−
1
µs
−
−
4
µs
−
−
0.8 µs
−
1.6 2.5 µs
−
150 400 ns
handbook1, 2h0alfpage
Ptot max
(%)
80
MGK674
40
0
0
50
100 Th (oC) 150
Fig.2 Power derating curve.
handbook, halfpage
+ 50 V
100 to 200 Ω
L
horizontal
oscilloscope
vertical
6V
30 to 60 Hz
300 Ω
1Ω
MGE252
Fig.3 Test circuit for collector-emitter
sustaining voltage.
1999 Jun 11
4
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