BUT18F Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

fabricante

BUT18F

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUT18F; BUT18AF

DESCRIPTION

High-voltage, high-speed,

glass-passivated NPN power

transistor in a SOT186 package with

electrically isolated mounting base.

APPLICATIONS

• Converters

• Inverters

• Switching regulators

• Motor control systems.

PINNING

PIN

DESCRIPTION

1

base

2

collector

3

emitter

mb mounting base; electrically isolated from all pins

andbook, halfpage

2

1

MBB008

3

1 2 3 MBK109

Fig.1 Simplified outline (SOT186) and symbol.

QUICK REFERENCE DATA

SYMBOL

VCESM

VCEO

VCEsat

ICsat

IC

ICM

Ptot

tf

PARAMETER

collector-emitter peak voltage

BUT18F

BUT18AF

collector-emitter voltage

BUT18F

BUT18AF

collector-emitter saturation voltage

collector saturation current

collector current (DC)

collector current (peak value)

total power dissipation

fall time

CONDITIONS

VBE = 0

open base

see Fig.7

see Fig.4

see Fig.4

Th ≤ 25 °C; see Fig.2

resistive load; see Figs 10 and 11

MAX.

850

1 000

400

450

1.5

4

6

12

33

0.8

UNIT

V

V

V

V

V

A

A

A

W

µs

THERMAL CHARACTERISTICS

SYMBOL

Rth j-h

PARAMETER

CONDITIONS

thermal resistance from junction to external heatsink note 1

note 2

Notes

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

2. Mounted with heatsink compound and 30 ±5 N force on centre of package.

1999 Jun 11

2

VALUE

6.15

3.65

UNIT

K/W

K/W

Share Link: