TIP30C Ver la hoja de datos (PDF) - ON Semiconductor
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TIP30C Datasheet PDF : 5 Pages
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TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0) (Note 2)
TIP29G, TIP30G
TIP29AG, TIP30AG
TIP29BG, TIP30BG
TIP29CG, TIP30CG
VCEO(sus)
Vdc
40
−
60
−
80
−
100
−
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
TIP29G, TIP29AG, TIP30G, TIP30AG
(VCE = 60 Vdc, IB = 0)
TIP29BG, TIP29CG, TIP30BG, TIP30CG
ICEO
−
−
mAdc
0.3
0.3
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0)
TIP29G, TIP30G
(VCE = 60 Vdc, VEB = 0)
TIP29AG, TIP30AG
(VCE = 80 Vdc, VEB = 0)
TIP29BG, TIP30BG
(VCE = 100 Vdc, VEB = 0)
TIP29CG, TIP30CG
ICES
mAdc
−
200
−
200
−
200
−
200
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
−
mAdc
1.0
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.2 Adc, VCE = 4.0 Vdc)
(IC = 1.0 Adc, VCE = 4.0 Vdc)
hFE
−
40
−
15
75
Collector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 125 mAdc)
VCE(sat)
−
Vdc
0.7
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 4.0 Vdc)
VBE(on)
−
Vdc
1.3
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 3)
(IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
MHz
3.0
−
Small−Signal Current Gain
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
−
20
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
3. fT = ⎪hfe⎪• ftest
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