VSC7810(2001) Ver la hoja de datos (PDF) - Vitesse Semiconductor
Número de pieza
componentes Descripción
fabricante
VSC7810
(Rev.:2001)
(Rev.:2001)
Vitesse Semiconductor
VSC7810 Datasheet PDF : 14 Pages
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VITESSE
SEMICONDUCTOR CORPORATION
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Data Sheet
VSC7810
Table 1: Electro-Optical Specifications(1)
Symbol
Parameter
Min Typ(2) Max Units
Conditions
VSS
IDD
PSRR
Supply Voltage
Supply Current
Power Supply Rejection Ratio
4.5
5.0
5.5
V
13
26
40
mA
35
-
-
dB
Frequencies up to 40MHz
(includes external filter).
λ
Wavelength
fC
Low Frequency Cutoff
BW
Optical Modulation Bandwidth
S
Sensitivity
700
840
850
nm
-
-
1.8
MHz -3dB, P = -15dBm @ 50MHz(4)
800
1200 1300
MHz -3dB, P = -15dBm @ 50MHz(4)
-22
-25
-27
dBm 1.063Gb/s, BER10-12(3)
RO
Single-Ended Output Impedance
25
-
60
Ω
VD
Differential Output Voltage
0.35 0.52 0.65
V
P = -4.5dBm,
RLOAD = 100Ω differential
RD
Differential Responsivity
0.8
2.2
-
mV/µW
RLOAD = 100Ω
P = -15dBm @ 50MHz
VDC
∆VDC
NEPO
VNO
DCD
Output Bias Voltage
Bias Offset Voltage
Input Noise Equivalent Power
Output Noise Voltage
Duty Cycle Distortion
1.2
1.5
2.5
V
-
40
150
mV
0.35
0.45
0.93 µW rms P = 0mW(5)
0.55
0.66
0.75 mV rms P = 0mW(5)
-
1.5
4.5
% P = -4.5dBm
IOUT
PDJ
Output Drive Current
Pattern Dependent Jitter
2.5
-
8
mA
20
40
60
ps
P = -4.5dBm
+/-10% Voltage Window
Optically Active Area
-
100
-
µm Diameter
PPJ
PP Jitter
120
160
200
ps P = -5dBm
tR
Rise Time
310
355
400
ps 20%-80% P = -4.5dBm
tF
Fall Time
280
325
370
ps 20%-80% P = -4.5dBm
Notes: (1) Specified over 0°C (ambient) to 70°C (case). (2) Typical conditions 25°C and 3.3V power supply. (3) See Note 1 in
Application Note 48. (4) P = Incident Optical Power (5) See Note 2 in Application Note 48.
Page 2
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52145-0, Rev 4.1
04/05/01
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