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BF622

NPN Silicon High Voltage Medium-Power Transistor

Planeta Semiconductor 

BF622

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

Characteristic

Symbol Min

Typ

DC CHARACTERISTICS

Collector – Base Cutoff Current,

IE= 0mA, VCB=200V

Emitter – Base Cutoff Current,

IC= 0mA, VEB= 5V

Collector – Base Breakdown Voltage,

IC= 10µA, IE= 0mA

Collector – Emitter Breakdown Voltage,

IC= 1mA, IB= 0mA

Emitter – Base Breakdown Voltage,

IE=100µA, IC= 0mA

DC Current Gain,

IC= 25mA, VCE= 20V

AC CHARACTERISTICS

Collector – Emitter Saturation Voltage,

IC= 30mA, IB= 5mA

Base – Emitter Saturation Voltage,

IC= 20mA, IB= 2mA

Collector – Base Capacitance,

IE= 0mA, VCB= 30V, f=1MHz

Current Gain – Bandwidth Product,

IC= 10mA, VCE= 10V

ICBO

–

–

IEBO

–

–

V(BR)CBO

250

–

V(BR)CEO

250

–

V(BR)CEO

5

–

hFE

50

–

VCE(sat)

–

–

VBE(sat)

–

–

COB

–

–

fT

60

–

PACKAGE DIMENSIONS of BF622 in mm

Max

10

50

–

–

–

–

0.6

0.9

1.6

–

4.5±0,1

B

1.9max

1.5±0.1

Unit

nA

nA

V

V

V

–

V

V

pF

MHz

1

2

3

0.4±0.05

0.5±0.05

0.4

B

1.5

3.0

PLASTIC CASE KT-47

Ph./Fax: +7–816–2231736

E-mail: planeta@novgorod.net

http://www.novgorod.net/~planeta

2

PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia

© August 2001 Rev 1

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