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PTFB213004FV2R250XTMA1   Datasheet

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Infineon
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
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Match & Start : PTFB213004FV2R250XTMA1
Cree
Cree, Inc
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Cree
Cree, Inc
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Infineon
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Cree
Cree, Inc
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Infineon
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Infineon
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Cree
Cree, Inc
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Infineon
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Infineon
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Infineon
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
1


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