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NX5317   Datasheet

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CEL
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
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Match & Start : NX5317
CEL
California Eastern Laboratories.
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
CEL
California Eastern Laboratories.
LASER DIODE
Renesas
Renesas Electronics
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
CEL
California Eastern Laboratories.
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
CEL
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
CEL
California Eastern Laboratories.
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
CEL
California Eastern Laboratories.
NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
CEL
California Eastern Laboratories.
NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s AND FTTH APPLICATIONS
CEL
California Eastern Laboratories.
NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS
CEL
California Eastern Laboratories.
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
CEL
California Eastern Laboratories.
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
Renesas
Renesas Electronics
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
CEL
California Eastern Laboratories.
NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s AND FTTH APPLICATIONS
CEL
California Eastern Laboratories.
NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s AND FTTH APPLICATIONS
CEL
California Eastern Laboratories.
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
CEL
California Eastern Laboratories.
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
CEL
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
CEL
California Eastern Laboratories.
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
Renesas
Renesas Electronics
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
CEL
California Eastern Laboratories.
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
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