datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  MAGX-100027-100 Datasheet

MAGX-100027-100   Datasheet

Match, Like
Start with
Not Available
End
Not Available
Included
Not Available
Manufacturer
Part Name
Description
View
MA-COM
M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
PDF
Match & Start : MAGX-100027-100
MA-COM
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
MA-COM
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
MA-COM
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty
MA-COM
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty
MA-COM
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty
MA-COM
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty
MA-COM
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty
MA-COM
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
MA-COM
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
MA-COM
M/A-COM Technology Solutions, Inc.
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
MA-COM
M/A-COM Technology Solutions, Inc.
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
MA-COM
M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
MA-COM
M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
MA-COM
M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
MA-COM
M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
MA-COM
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty
MA-COM
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty
1


All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]