Manufacturer
Part Name
Description
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Intersil
3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE (TO-205AF)
Semelab - > TT Electronics plc
N-Channel MOSFET in a Hermetically sealed TO39 Metal Package
GE Solid State
Power MOS Field-Effect Transistors
Inchange Semiconductor
N-Channel MOSFET Transistor
GE Solid State
Power MOS Field-Effect Transistors
Semelab - > TT Electronics plc
N–CHANNEL POWER MOSFET ENHANCEMENT MODE
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39)
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE (TO-205AF)
New Jersey Semiconductor
N-CHANIMEL POWER MOSFETs TO-39 PACKAGE
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39)
GE Solid State
N-Channel Enhancement-Mode Power Field-Effect Transistor
Unspecified
SEMICONDUCTORS
New Jersey Semiconductor
N-CHANIMEL POWER MOSFETs TO-39 PACKAGE
GE Solid State
Power MOS Field-Effect Transistors
Intersil
6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET
GE Solid State
N-Channel Enhancement-Mode Power Field-Effect Transistor
GE Solid State
Power MOS Field-Effect Transistors
GE Solid State
Power MOS Field-Effect Transistors
Intersil
3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET
GE Solid State
Power MOS Field-Effect Transistors
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
New Jersey Semiconductor
8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET
GE Solid State
Power MOS Field-Effect Transistors