New Jersey Semiconductor

HIGH CONDUCTANCE LOW LEAKAGE DIFFUSED SILICON PLANAR DIODE

MITSUBISHI ELECTRIC

HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE

Infineon Technologies

62mm C-Serien module with trench/fieldstop IGBT3 and Emitter Controlled3 diode

Infineon Technologies

EconoPACK™4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC

eupec GmbH

IGBT-Modules

Infineon Technologies

IGBT-Modules

Infineon Technologies

62mm C-series module with the fast IGBT2 for high-frequency switching

eupec GmbH

62mm C-series module with the fast IGBT2 for high-frequency switching

Infineon Technologies

62mm C-series module with the fast IGBT2 for high-frequency switching

Infineon Technologies

62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and pre-applied Thermal Interface Material

Fairchild Semiconductor

12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs

Intersil

12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs

STMicroelectronics

100 V field-effect rectifier diode

STMicroelectronics

100 V field-effect rectifier diode

STMicroelectronics

100 V field-effect rectifier diode

STMicroelectronics

100 V field-effect rectifier diode