ZXTD619MC Datasheet - Diodes Incorporated.
MFG CO.

Diodes Incorporated.
Features and Benefits
• BVCEO > 50V
• IC = 4A Continuous Collector Current
• Low Saturation Voltage (100mV max @ 1A)
• RSAT = 68mΩ for Low Equivalent On Resistance
• hFE specified up to 6A for high current gain holds up
• Dual NPN saving footprint and component count
• Low profile 0.8mm high package for thin applications
• RθJA efficient, 40% lower than SOT26
• 6mm2 footprint, 50% smaller than TSOP6 and SOT26
• Lead-Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
APPLICATIONs
• DC – DC Converters
• MOSFET gate drivers
• Charging circuits
• Motor Control
• Power switches
• Portable applications
Part Name
Description
View
MFG CO.
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
Zetex => Diodes
50V NPN LOW SATURATION SWITCHING TRANSISTOR
Diodes Incorporated.
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ( Rev : 2009 )
Diodes Incorporated.
50V NPN LOW SATURATION SWITCHING TRANSISTOR ( Rev : 2015 )
Diodes Incorporated.
50V DUAL NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26
Diodes Incorporated.
SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
Zetex => Diodes
SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ( Rev : 2001 )
Diodes Incorporated.
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ( Rev : 1999 )
Diodes Incorporated.
50V DUAL NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26
Diodes Incorporated.
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
Diodes Incorporated.