General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.

FEATUREs
◾ 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V
◾ Ultra-low Gate charge(Typical 28nC)
◾ Fast Switching Capability
◾ 100%Avalanche Tested
◾ Isolation Voltage (VISO=4000V AC)
◾ Maximum Junction Temperature Range(150℃)