[Winsemi Microelectronics Co., Ltd.]

General Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.

FEATUREs
■ 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 32nC)
■ Fast Switching Capability
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range(150℃)