General Description
   This Power MOSFET is produced using Winsemis advancedplanar stripe,VDMOS technology. This latest technology has beenespecially designed to minimize on -state resistance,have a highrugged avalanche characteristics. This devices is specially wellsuited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.

FEATUREs
◾ 10A,400V,RDS(on)(Max 0.55Ω)@VGS=10V
◾ Ultra-low Gate Charge(Typical 60nC)
◾ Fast Switching Capability
◾ 100%Avalanche Tested
◾ Maximum Junction Temperature Range(150℃ )