General Description
   This Power MO S FET is produced using Win se m i ’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS.

FEATUREs
◾ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V
◾ Ultra-low Gate Charge(Typical 6.1nC)
◾ High Current Capability
◾ 100%Avalanche Tested
◾ Maximum Junction Temperature Range(150℃)