datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  Winbond  >>> W29GL128C PDF

W29GL128C Datasheet - Winbond

W29GL128CH9T image

Part Name
W29GL128C

Other PDF
  2011  

PDF
DOWNLOAD     

page
67 Pages

File Size
961 kB

MFG CO.
Winbond
Winbond 

 GENERAL DESCRIPTION
The W29GL128C Parallel Flash memory provides a storage solution for embedded system applications that require better performance, lower power consumption and higher density. The device has a random access speed of 90ns and a fast page access speed of 25ns, as well as significantly faster program and erase time than the products available on the market today. The W29GL128C also offers special features such as Compatible Manufacturer ID that makes the device industry standard compatible without the need to change firmware.


FEATURES
• 64k-Word/128k-Byte uniform sector architecture
    – Total 128 uniform sectors
• 32-Word/64-Byte write buffer
    – Reduces total program time for multiple-word updates
• 8-Word/16-Byte page read buffer
• Secured Silicon Sector area
    – Programmed and locked by the customer or during production
    – 128-word/256-byte sector for permanent, safe identification using an 8-word/16-byte random electronic serial number
• Enhanced Sector Protect using Dynamic and Individual mechanisms
• Polling/Toggling methods are used to detect the status of program and erase operation
• Suspend and resume commands used for program and erase operations
• More than 100,000 erase/program cycles
• More than 20-year data retention
• Software and Hardware write protection
    – Write-Protect all or a portion of memory
    – Enable/Disable protection with #WP pin
    – Top or bottom array protection
• Low power consumption
• Deep power down mode
• Wide temperature range
• Compatible manufacturer ID for drop-in replacement
    – No firmware change is required
• Faster Erase and Program time
    – Erase is 1.5x faster than industry standard
    – Program is 2x faster than industry standard
    – Allows for improved production throughput and faster field updates
• CFI (Common Flash Interface) support
• Single 3V Read/Program/Erase (2.7 - 3.6V)
• Enhanced Variable IO control
    – All input levels (address, control, and DQ) and output levels are determined by voltage on the EVIO input. EVIO ranges from 1.65 to VCC
• #WP/ACC Input
    – Accelerates programming time (when VHH is applied) for greater throughput during system production
    – Protects first or last sector regardless of sector protection settings
• Hardware reset input (#reset) resets device
• Ready/#Busy output (RY/#BY) detects completion of program or erase cycle
• Packages
    – 56-pin TSOP
    – 56-ball TFBGA
    – 64-ball LFBGA

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Part Name
Description
View
MFG CO.
64M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
PDF
Winbond
PAGE MODE FLASH MEMORY
PDF
Fujitsu
256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
PDF
Eon Silicon Solution Inc.
128 Megabit (16384K x 8-bit / 8192K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
PDF
Eon Silicon Solution Inc.
64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
PDF
Eon Silicon Solution Inc.
64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
PDF
Eon Silicon Solution Inc.
64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
PDF
Eon Silicon Solution Inc.
128 Megabit (16384K x 8-bit / 8192K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
PDF
Eon Silicon Solution Inc.
MEMORY SPI NOR FLASH 128M BIT
PDF
AiT Semiconductor Inc.
BURST MODE FLASH MEMORY CMOS 128M (8M × 16) BIT
PDF
Spansion Inc.

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]