W20NM60 Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
FEATUREs
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATIONs
■ Switching applications
Part Name
Description
View
MFG CO.
N-CHANNEL 600V - 0.075Ω - 47A TO-247 MDmesh™Power MOSFET
STMicroelectronics
N-CHANNEL 600V - 0.125Ω - 30A TO-247 MDmesh™ MOSFET
STMicroelectronics
N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh™ Power MOSFET ( Rev : 2007 )
STMicroelectronics
N-CHANNEL 20A - 600V TO-247 PowerMESH™ IGBT
New Jersey Semiconductor
N-CHANNEL 20A - 600V TO-247 PowerMESH™ IGBT
STMicroelectronics
N-CHANNEL 20A - 600V TO-247 PowerMESH™ IGBT
STMicroelectronics
N-CHANNEL 600V - 0.125Ω - 26A TO-247 Zener-Protected MDmesh™ Power MOSFET
STMicroelectronics
N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh™ Power MOSFET ( Rev : 2006 )
STMicroelectronics
N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh™ MOSFET
STMicroelectronics
N-CHANNEL 600V 0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET ( Rev : 2005 )
STMicroelectronics