DESCRIPTION
The 110 °C rated VOM617A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin 100 mil lead pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage.

FEATURES
• Operating temperature from - 55 °C to + 110 °C
• SOP-4 mini-flat package
• Isolation test voltage, 3750 VRMS
• Low saturation voltage
• Fast switching times
• Low coupling capacitance
• End-stackable, 0.100" (2.54 mm) spacing
• CTR range 40 % to 600 %, IF= 5 mA