datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  Vishay Semiconductors  >>> VIT3060C-M3-4W PDF

VIT3060C-M3-4W(2011) Datasheet - Vishay Semiconductors

VIT3060C-M3-4W image

Part Name
VIT3060C-M3-4W

Other PDF
  lastest PDF  

PDF
DOWNLOAD     

page
5 Pages

File Size
116.7 kB

MFG CO.
Vishay
Vishay Semiconductors 

FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS
    For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.

Page Link's: 1  2  3  4  5 

Part Name
Description
View
MFG CO.
Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : C14 )
PDF
TSC Corporation
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
PDF
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2011 )
PDF
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2011 )
PDF
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
PDF
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
PDF
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2011 )
PDF
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
PDF
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
PDF
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
PDF
Vishay Semiconductors

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]