V80100PW(2013) Datasheet - Vishay Semiconductors
MFG CO.

Vishay Semiconductors
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
Part Name
Description
View
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2011 )
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors