V30D45C(2020) Datasheet - Vishay Semiconductors
MFG CO.

Vishay Semiconductors
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
Part Name
Description
View
MFG CO.
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2013 )
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2018 )
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2013 )
Vishay Semiconductors