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UPG2010TB Datasheet - NEC => Renesas Technology

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Part Name
UPG2010TB

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11 Pages

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75.9 kB

MFG CO.
NEC
NEC => Renesas Technology 

DESCRIPTION
The µPG2010TB is GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L-band application.
This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.
This device is housed in a 6-pin super minimold package. And this package is able to high-density surface mounting.


FEATURES
• Supply voltage : VDD = 2.7 to 3.0 V (2.8 V TYP.)
• Switch control voltage : Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.)
                                      : Vcont (L) = −0.2 to +0.2 V (0 V TYP.)
• Low insertion loss  
    : LINS1 = 0.25 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
    : LINS2 = 0.30 dB TYP. @ f = 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
    : LINS3 = 0.35 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference value)
• High isolation : ISL1 = 28 dB TYP. @ f = 0.5 to 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
                         : ISL2 = 25 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference value)
• High power : Pin (0.1 dB) = +33.0 dBm TYP. @ f = 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)


APPLICATIONS
• L-band digital cellular or cordless telephone
• PCS, W-LAN, WLL and BluetoothTM etc.

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

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