Part Name
UPA862TD-T3
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MFG CO.
Renesas Electronics
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UPA862TD-T3 Datasheet - Renesas Electronics
Renesas Electronics
FEATURES
• Low voltage operation
• 2 different built-in transistors (2SC5010, 2SC5801)
Q1: Built-in high gain transistor
fT = 12.0 GHz TYP., ⏐S21e⏐2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
Q2: Built-in low phase distortion transistor suited for OSC operation
fT = 4.5 GHz TYP., ⏐S21e⏐2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• 6-pin lead-less minimold package
Part Name
Description
View
MFG CO.
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD
NEC => Renesas Technology
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD
NEC => Renesas Technology
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
NEC => Renesas Technology
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
NEC => Renesas Technology
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
NEC => Renesas Technology
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