UPA843TC Datasheet - NEC => Renesas Technology
MFG CO.

NEC => Renesas Technology
FEATURES
• Flat-lead 6-pin thin-type ultra super minimold package
• 2 different built-in transistors (2SC5603, 2SC5600)
• Low voltage operation
Q1: Built-in high gain transistor
fT = 13.5 GHz, |S21e|2 = 10.0 dB @ VCE = 1 V, IC = 5 mA, f = 2 GHz
Q2: Built-in low phase distortion transistor suited for OSC operation
fT = 5.0 GHz, |S21e|2 = 4.0 dB @ VCE = 1 V, IC = 5 mA, f = 2 GHz
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
Part Name
Description
View
MFG CO.
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
NEC => Renesas Technology
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
NEC => Renesas Technology
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
NEC => Renesas Technology
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD
NEC => Renesas Technology
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD
NEC => Renesas Technology
NPN Silicon RF Twin Transistor (with 2 Different Elements) in a 6-pin Lead-less Minimold
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5195) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
NEC => Renesas Technology