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UPA834TF(1999) Datasheet - NEC => Renesas Technology

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Part Name
UPA834TF

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MFG CO.
NEC
NEC => Renesas Technology 

DESCRIPTION
The UPA834TF has two different built-in transistors for low cost amplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs.


FEATURES
• LOW NOISE:
   Q1:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
   Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
• HIGH GAIN:
   Q1: |S21E|2 = 12.0 dB TYP at f = 1 GHz, VCE = 3 V,
   lc = 7 mA
   Q2: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V,
   lc = 7 mA
• 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
• 2 DIFFERENT BUILT-IN TRANSISTORS
   (Q1: NE681, Q2: NE856)

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