
NEC => Renesas Technology
DESCRIPTION
The UPA834TF has two different built-in transistors for low cost amplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs.
FEATURES
• LOW NOISE:
Q1:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
• HIGH GAIN:
Q1: |S21E|2 = 12.0 dB TYP at f = 1 GHz, VCE = 3 V,
lc = 7 mA
Q2: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V,
lc = 7 mA
• 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
• 2 DIFFERENT BUILT-IN TRANSISTORS
(Q1: NE681, Q2: NE856)