Part Name
UPA808TC
Description
Other PDF
PDF
page
16 Pages
File Size
88.5 kB
MFG CO.
NEC => Renesas Technology
UPA808TC Datasheet - NEC => Renesas Technology
NEC => Renesas Technology
FEATURES
• Built-in high-gain transistor
fT = 9.0 GHz TYP., S21e2 = 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz
• Built-in 2 transistors (2 × 2SC5436)
• Flat-lead 6-pin thin-type ultra super minimold package
Part Name
Description
View
MFG CO.
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
NEC => Renesas Technology
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5195) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR(WITH BUILT-IN 2 ×2SC5004) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
NEC => Renesas Technology
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD
NEC => Renesas Technology
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