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UPA1952TE Datasheet - NEC => Renesas Technology

UPA1952 image

Part Name
UPA1952TE

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page
8 Pages

File Size
67.7 kB

MFG CO.
NEC
NEC => Renesas Technology 

DESCRIPTION
The µ PA1952 is a switching device, which can be driven directly by a 1.8 V power source.
The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


FEATURES
• 1.8 V drive available
• Low on-state resistance
    RDS(on)1 = 135 mΩ MAX. (VGS = −4.5V, ID = −1.0 A)
    RDS(on)2 = 183 mΩ MAX. (VGS = −2.5 V, ID = −1.0 A)
    RDS(on)3 = 284 mΩ MAX. (VGS = −1.8 V, ID = −0.5 A)


Part Name
Description
View
MFG CO.
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology

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