datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  NEC => Renesas Technology  >>> UPA1812GR-9JG PDF

UPA1812GR-9JG Datasheet - NEC => Renesas Technology

UPA1812 image

Part Name
UPA1812GR-9JG

Other PDF
  no available.

PDF
DOWNLOAD     

page
8 Pages

File Size
58.6 kB

MFG CO.
NEC
NEC => Renesas Technology 

DESCRIPTION
The µPA1812 is a switching device which can be driven directly by a 4.0-V power source.
The µPA1812 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


FEATURES
• Can be driven by a 4.0-V power source
• Low on-state resistance
   RDS(on)1 = 39 mΩ MAX. (VGS = –10 V, ID = –2.5 A)
   RDS(on)2 = 63 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
   RDS(on)3 = 69 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A)

Page Link's: 1  2  3  4  5  6  7  8 

Part Name
Description
View
MFG CO.
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]