DESCRIPTION
This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.

FEATURES
• Low on-resistance
   RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A)
   RDS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A)
   RDS(on)3 = 19.0 mΩ TYP. (VGS = –4.0 V, ID = –4 A)
• Low Ciss : Ciss = 2100 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)