DESCRIPTION
This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.

FEATURES
• Low on-resistance
    RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A)
    RDS(on)2 = 11.0 mΩ TYP. (VGS = –4.5 V, ID = –6.0 A)
    RDS(on)3 = 12.0 mΩ TYP. (VGS = –4.0 V, ID = –6.0 A)
• Low Ciss : Ciss = 3800 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)